Temperature dependence of thin-film transistors electrical characteristics with multiple nano-wire channels

Abstract

We have investigated the temperature dependent electrical characteristics of lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths from 25 degrees C to 175 degrees C. The ten 67 nm-wide spilt channels TFT has best transfer characteristics, because of its robust trigate control and grain boundary defects is the lowest, due to its split nan-wires structure with effective NH3 plasma passivation.