RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

Abstract

Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MINI capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MINI capacitor has good device integrity of low leakage current of 4.3x10(-8) A/cm(2), small frequency-dependent capacitance reduction, and good reliability.