RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

標題:	RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics
作者:	Chen, SB Lai, CH Chin, A Hsieh, JC Liu, J 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2002
摘要:	Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MINI capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MINI capacitor has good device integrity of low leakage current of 4.3x10(-8) A/cm(2), small frequency-dependent capacitance reduction, and good reliability.
URI:	http://hdl.handle.net/11536/18827 http://dx.doi.org/10.1109/MWSYM.2002.1011593
ISBN:	0-7803-7239-5
ISSN:	0149-645X
DOI:	10.1109/MWSYM.2002.1011593
期刊:	2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3
起始頁:	201
結束頁:	204
顯示於類別：	會議論文

文件中的檔案：

若為 zip 檔案，請下載檔案解壓縮後，用瀏覽器開啟資料夾中的 index.html 瀏覽全文。