FABRICATION OF MOSFETS USING LOW-TEMPERATURE LIQUID-PHASE DEPOSITED OXIDE

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DC Field	Value	Language
dc.contributor.author	YEH, CF	en_US
dc.contributor.author	LIN, SS	en_US
dc.contributor.author	HONG, TY	en_US
dc.date.accessioned	2014-12-08T15:03:22Z	-
dc.date.available	2014-12-08T15:03:22Z	-
dc.date.issued	1995-06-01	en_US
dc.identifier.issn	0167-9317	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1902	-
dc.description.abstract	Low-temperature, high quality liquid-phase deposition (LPD) oxide was developed. The MOSFETs with such a new LPD oxide as gate insulators were investigated. The electrical characteristics, including threshold voltage of 2.1 Volts, peak effective mobility (mu(FE)) Of 580 cm(2)/V . s, and subthreshold swing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFETs. This demonstrates that LPD oxide can be an suitable candidate for future gate insulators in low-temperature processed MOSFETs.	en_US
dc.language.iso	en_US	en_US
dc.title	FABRICATION OF MOSFETS USING LOW-TEMPERATURE LIQUID-PHASE DEPOSITED OXIDE	en_US
dc.type	Article; Proceedings Paper	en_US
dc.identifier.journal	MICROELECTRONIC ENGINEERING	en_US
dc.citation.volume	28	en_US
dc.citation.issue	1-4	en_US
dc.citation.spage	101	en_US
dc.citation.epage	104	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995RD49200022	-
Appears in Collections:	Conferences Paper

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