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dc.contributor.authorYEH, CFen_US
dc.contributor.authorLIN, SSen_US
dc.contributor.authorHONG, TYen_US
dc.date.accessioned2014-12-08T15:03:22Z-
dc.date.available2014-12-08T15:03:22Z-
dc.date.issued1995-06-01en_US
dc.identifier.issn0167-9317en_US
dc.identifier.urihttp://hdl.handle.net/11536/1902-
dc.description.abstractLow-temperature, high quality liquid-phase deposition (LPD) oxide was developed. The MOSFETs with such a new LPD oxide as gate insulators were investigated. The electrical characteristics, including threshold voltage of 2.1 Volts, peak effective mobility (mu(FE)) Of 580 cm(2)/V . s, and subthreshold swing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFETs. This demonstrates that LPD oxide can be an suitable candidate for future gate insulators in low-temperature processed MOSFETs.en_US
dc.language.isoen_USen_US
dc.titleFABRICATION OF MOSFETS USING LOW-TEMPERATURE LIQUID-PHASE DEPOSITED OXIDEen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalMICROELECTRONIC ENGINEERINGen_US
dc.citation.volume28en_US
dc.citation.issue1-4en_US
dc.citation.spage101en_US
dc.citation.epage104en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RD49200022-
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