標題: Novel input ESD protection circuit with substrate-triggering technique in a 0.25-mu m shallow-trench-isolation CMOS technology
作者: Ker, MD
Chen, TY
Wu, CY
Tang, H
Su, KC
Sun, SW
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1998
摘要: A substrate-triggering technique, to increase the ESD robustness and to reduce the trigger voltage of the ESD protection device, is proposed to improve the ESD-protection efficiency of the input ESD protection circuit in deep-submicron CMOS technology. Through suitable substrate-triggering design on the device structure, this proposed input ESD protection circuit can successfully protect the thinner gate oxide (50 Angstrom) of the input stage in a 0.25-mu m CMOS technology and sustain an ESD level above 2000V without extra process modification.
URI: http://hdl.handle.net/11536/19538
ISBN: 0-7803-4455-3
期刊: ISCAS '98 - PROCEEDINGS OF THE 1998 INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-6
起始頁: A212
結束頁: A215
Appears in Collections:Conferences Paper