Title: | HfO2 nanocrystal memory on SiGe channel |
Authors: | Lin, Yu-Hsien Chien, Chao-Hsin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | Hafnium oxide;Nanocrystals;Nonvolatile memories;Flash memory;SiGe channel |
Issue Date: | 1-Feb-2013 |
Abstract: | This study proposes a novel HfO2 nanocrystal memory on epi-SiGe (Ge: 15%) channel. Because SiGe has a smaller bandgap than that of silicon, it increases electron/hole injection and the enhances program/erase speeds. This study compares the characteristics of HfO2 nanocrystal memories with different oxynitride tunnel oxide thicknesses on Si and epi-SiGe substrate. Results show that the proposed nonvolatile memory possesses superior characteristics in terms of considerably large memory window for two-bits operation, high speed program/erase for low power applications, long retention time, excellent endurance, and strong immunity to disturbance. (C) 2012 Elsevier Ltd. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.sse.2012.10.009 http://hdl.handle.net/11536/21443 |
ISSN: | 0038-1101 |
DOI: | 10.1016/j.sse.2012.10.009 |
Journal: | SOLID-STATE ELECTRONICS |
Volume: | 80 |
Issue: | |
Begin Page: | 5 |
End Page: | 9 |
Appears in Collections: | Articles |
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