標題: | Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs |
作者: | Chan, M Su, P Wan, H Lin, CH Fung, SKH Niknejad, AM Hu, CM Ko, PK 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | SOI;SOI devices;circuit simulation;device model;SPICE;BSIMSOI |
公開日期: | 1-Jun-2004 |
摘要: | This paper describes a unified framework to model the floating-body effects of various SOI MOSFET operation modes, including body-contacted mode, partially depleted mode and fully depleted mode. As the operation mode is dimension and bias dependent, different modes can co-exist in a single SOI technology. A smooth transit from one type of operation mode to another is thus essential and has been included in the model. In addition, the floating-body effects can couple to a number of other SOI specific phenomena such as heating assisted impact ionization, gate tunneling induced dynamic behavior, and operation mode dependent small signal output resistance. A methodology to model the overall SOI MOSFET behavior due to the combination of multiple floating-body related effects will also be described. (C) 2004 Published by Elsevier Ltd. |
URI: | http://dx.doi.org/10.1016/j.sse.2003.12.012 http://hdl.handle.net/11536/26704 |
ISSN: | 0038-1101 |
DOI: | 10.1016/j.sse.2003.12.012 |
期刊: | SOLID-STATE ELECTRONICS |
Volume: | 48 |
Issue: | 6 |
起始頁: | 969 |
結束頁: | 978 |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.