標題: Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
作者: Chan, M
Su, P
Wan, H
Lin, CH
Fung, SKH
Niknejad, AM
Hu, CM
Ko, PK
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SOI;SOI devices;circuit simulation;device model;SPICE;BSIMSOI
公開日期: 1-Jun-2004
摘要: This paper describes a unified framework to model the floating-body effects of various SOI MOSFET operation modes, including body-contacted mode, partially depleted mode and fully depleted mode. As the operation mode is dimension and bias dependent, different modes can co-exist in a single SOI technology. A smooth transit from one type of operation mode to another is thus essential and has been included in the model. In addition, the floating-body effects can couple to a number of other SOI specific phenomena such as heating assisted impact ionization, gate tunneling induced dynamic behavior, and operation mode dependent small signal output resistance. A methodology to model the overall SOI MOSFET behavior due to the combination of multiple floating-body related effects will also be described. (C) 2004 Published by Elsevier Ltd.
URI: http://dx.doi.org/10.1016/j.sse.2003.12.012
http://hdl.handle.net/11536/26704
ISSN: 0038-1101
DOI: 10.1016/j.sse.2003.12.012
期刊: SOLID-STATE ELECTRONICS
Volume: 48
Issue: 6
起始頁: 969
結束頁: 978
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