標題: Efficient improvement of hot-carrier-induced device's degradation for sub-0.1 mu m complementary metal-oxide-semiconductor field-effect-transistor technology
作者: Lin, JC
Yeh, WK
Lei, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: halo;indium;post-thermal annealing;hot-carrier-induced device degradation
公開日期: 1-Apr-2004
摘要: The effect of post-thermal annealing (PA) after In-halo and As-halo implantation on the reliability of sub-0.1 mum complementary metal-oxide-semiconductor field-effect-transistors was investigated. We found that the control of annealing time is more efficient than that of annealing temperature with respect to improving hot-carrier-induced device's degradation. The optimal results of device performance as well as of reliability can be obtained with post-annealing treatment performed at medium temperatures (e.g.. 900degreesC) for a longer time.
URI: http://dx.doi.org/10.1143/JJAP.43.1737
http://hdl.handle.net/11536/26921
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.1737
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 43
Issue: 4B
起始頁: 1737
結束頁: 1741
Appears in Collections:Conferences Paper


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