High-density MIM canpacitors using AlTaOx dielectrics

標題:	High-density MIM canpacitors using AlTaOx dielectrics
作者:	Yang, MY Huang, CH Chin, A Zhu, CX Li, MF Kwong, DL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	capacitor;dielectric constant;frequency drpendence;high kappa;MIM;RF
公開日期:	1-五月-2003
摘要:	The authors have obtained good MIM capacitor integrity of high-capacitance density of 10 fF/mum(2) using high-k AlTaOx fabricated at 400degreesC. In addition, small voltage dependence of capacitance of < 600, ppm (quadratic voltage coefficient of only 130 ppm/V-2). is obtained at 1 GHz using their mathematical derivation from measured high-frequency S parameters. These good results ensure the high-k AlTaOx. MIM capacitor technology is useful for high-precision circuits operated at the RF frequency regime.
URI:	http://dx.doi.org/10.1109/LED.2003.812572 http://hdl.handle.net/11536/27913
ISSN:	0741-3106
DOI:	10.1109/LED.2003.812572
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	24
Issue:	5
起始頁:	306
結束頁:	308
顯示於類別：	期刊論文

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