標題: | A silicon nanowire with a Coulomb blockade effect at room temperature |
作者: | Hu, SF Wong, WZ Liu, SS Wu, YC Sung, CL Huang, TY Yang, TJ 電子物理學系 電子工程學系及電子研究所 Department of Electrophysics Department of Electronics Engineering and Institute of Electronics |
公開日期: | 17-五月-2002 |
摘要: | An extremely narrow and thin silicon wire has been fabricated on a silicon-on-insulator wafer (see Figure). The room-temperature Coulomb blockade effects as well as the influence of a capacitively coupled gate on the transport properties of this conducting silicon quantum wire are studied. The results obtained are encouraging for the application of such wires in single-electron transistors. |
URI: | http://hdl.handle.net/11536/28786 http://dx.doi.org/10.1002/1521-4095(20020517)14:10<736 |
ISSN: | 0935-9648 |
DOI: | 10.1002/1521-4095(20020517)14:10<736 |
期刊: | ADVANCED MATERIALS |
Volume: | 14 |
Issue: | 10 |
起始頁: | 736 |
結束頁: | + |
顯示於類別: | 期刊論文 |