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dc.contributor.authorSung, WJen_US
dc.contributor.authorWu, YRen_US
dc.contributor.authorLee, SCen_US
dc.contributor.authorWen, TCen_US
dc.contributor.authorLi, TJen_US
dc.contributor.authorChang, JTen_US
dc.contributor.authorLee, WIen_US
dc.date.accessioned2014-12-08T15:45:12Z-
dc.date.available2014-12-08T15:45:12Z-
dc.date.issued2000-06-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.39.L567en_US
dc.identifier.urihttp://hdl.handle.net/11536/30462-
dc.description.abstractDeep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.en_US
dc.language.isoen_USen_US
dc.subjectAlInPen_US
dc.subjectphosphorus vacancyen_US
dc.subjectdefecten_US
dc.subjectdeep levelen_US
dc.subjectDLTSen_US
dc.subjectdepth profile measurementen_US
dc.titlePhosphorus vacancy as a deep level in AlInP layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.39.L567en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume39en_US
dc.citation.issue6Ben_US
dc.citation.spageL567en_US
dc.citation.epageL568en_US
dc.contributor.department友訊交大聯合研發中心zh_TW
dc.contributor.departmentD Link NCTU Joint Res Ctren_US
dc.identifier.wosnumberWOS:000088393100005-
dc.citation.woscount1-
Appears in Collections:Articles


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