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dc.contributor.authorWu, YHen_US
dc.contributor.authorChin, Aen_US
dc.date.accessioned2014-12-08T15:45:36Z-
dc.date.available2014-12-08T15:45:36Z-
dc.date.issued2000-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/55.823573en_US
dc.identifier.urihttp://hdl.handle.net/11536/30684-
dc.description.abstractWe have investigated the gate oxide integrity of thermal oxides direct grown on high temperature formed Si0.3Ge0.7 Good oxide integrity is evidenced by the low interface-trap density of 5.9 x 10(10) eV(-1)cm(-2), low oxide charge density of -5.6 x 10(10) cm(-2), and the small stress-induced leakage current after -3.3 V stress for 10 000 s, The good gate oxide integrity is due to the high temperature formed and strain-relaxed Si0.3Ge0.7 that has a original smooth surface and stable after subsequent high temperature process.en_US
dc.language.isoen_USen_US
dc.subjectgate oxide integrityen_US
dc.subjectSiGe oxideen_US
dc.subjectstress-induced leakage currenten_US
dc.titleGate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7en_US
dc.typeArticleen_US
dc.identifier.doi10.1109/55.823573en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume21en_US
dc.citation.issue3en_US
dc.citation.spage113en_US
dc.citation.epage115en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000085620800007-
dc.citation.woscount13-
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