Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7

標題:	Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7
作者:	Wu, YH Chin, A 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	gate oxide integrity;SiGe oxide;stress-induced leakage current
公開日期:	1-三月-2000
摘要:	We have investigated the gate oxide integrity of thermal oxides direct grown on high temperature formed Si0.3Ge0.7 Good oxide integrity is evidenced by the low interface-trap density of 5.9 x 10(10) eV(-1)cm(-2), low oxide charge density of -5.6 x 10(10) cm(-2), and the small stress-induced leakage current after -3.3 V stress for 10 000 s, The good gate oxide integrity is due to the high temperature formed and strain-relaxed Si0.3Ge0.7 that has a original smooth surface and stable after subsequent high temperature process.
URI:	http://dx.doi.org/10.1109/55.823573 http://hdl.handle.net/11536/30684
ISSN:	0741-3106
DOI:	10.1109/55.823573
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	21
Issue:	3
起始頁:	113
結束頁:	115
顯示於類別：	期刊論文

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