標題: Charge storage characteristics of iridium silicide nanocrystals embedded in SiO(2) matrix for nonvolatile memory application
作者: Wang, Terry Tai-Jui
Hung, Shih Wei
Chuang, Pi Kai
Kuo, Cheng Tzu
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Oct-2010
摘要: In this work, the nanostructure-assisted "Al/SiO(2)/Ir-silicide-NCs/SiO(2)/P-Si-sub/Al" stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO(2) layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2 Vat sweeps of +/- 10 V by capacitance-voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06 x 10(13) cm(-2), indicating a high trapping efficiency stack for nonvolatile memory application. (C) 2010 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2010.04.092
http://hdl.handle.net/11536/32117
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2010.04.092
期刊: THIN SOLID FILMS
Volume: 518
Issue: 24
起始頁: 7287
結束頁: 7290
Appears in Collections:Articles