Ultralow-Power Ni/GeO/STO/TaN Resistive Switching Memory

Abstract

Using novel stacked covalent-bond-dielectric GeO(x) (GeO) on metal-oxide SrTiO(3) to form a cost-effective Ni/GeO/SrTiO/TaN resistive switching memory, an ultralow set power of small 4 mu W (3.5 mu A at 1.1 V), a reset power of 16 pW (0.12 nA at 0.13 V), and a large 10(6) memory window for 10(5)-s retention at 85 degrees C are realized for the first time. A positive temperature coefficient is measured at low-resistance state and different from the metallic filament in metal-oxide resistive random access memory.