| 標題: | INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY |
| 作者: | WANG, YH YARN, KF CHANG, CY 電控工程研究所 Institute of Electrical and Control Engineering |
| 公開日期: | 1-May-1990 |
| URI: | http://hdl.handle.net/11536/4110 |
| ISSN: | 0947-8396 |
| 期刊: | APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING |
| Volume: | 50 |
| Issue: | 5 |
| 起始頁: | 485 |
| 結束頁: | 493 |
| Appears in Collections: | Articles |
- A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY / WANG, YH;YARN, KF;CHANG, CY
- GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES / YARN, KF;WANG, YH;CHANG, CY
- A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS / YARN, KF;WANG, YH;CHANG, CY
- NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
- ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY / YARN, KF;WANG, YH;CHANG, CY
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