矽化鉑蕭特基金氧半電晶體使用高介電係數介電層與金屬閘極

Abstract

蕭特基金氧半電晶體可以克服源汲極寄生電阻效應，因其金屬與半導體接面的 低電阻。當蕭特基金氧半電晶體使用金屬閘極-高介電係數介電層的結構，它可 避免離子佈值後的高溫退火製程，也可避免對金屬閘極-高介電係數介電層的高 溫退火。在本篇論文中，會示範用簡單的低溫製程去製作出蕭特基金氧半電晶體，此元件是使用金屬矽化鉑為所需的源、汲極，整個製程的最高溫度為400度。

The Schottky barrier source/drain transistor (SSDT) has been proposed to overcome the series resistance problem of ultrashallow S/D junction of sub50–nm MOSFETs, due to the abrupt silicide/Si interface and low sheet resistance of silicide. SSDT is particularly attractive when a metal-gate/high-k gate stack is employed, as it avoids the use of a high-temperature annealing process required for implanted S/D junctions and poly gate, hence, eliminating the thermal stability issues associated with high-k gate stack. In this dissertation, p-channel SSDTs with PtSi S/Ds are demonstrated using a simplified low-temperature process. The highest temperature in the entire fabrication process was 400 oC .