標題: Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access Memory
作者: Chen, Min-Chen
Chang, Ting-Chang
Huang, Sheng-Yao
Chen, Shih-Ching
Hu, Chih-Wei
Tsai, Chih-Tsung
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2010
摘要: This study investigates a sputtered InGaZnO (IGZO) thin film to apply into a resistive random access memory device. After the formation of an indium tin oxide (ITO)/IGZO/ITO structure at room temperature, the device exhibits a repeatable bipolar resistance switching behavior without an electroforming process and an excellent transmittance in the visible region. The conduction mechanisms for low and high resistance states are dominated by Ohm's law and space-charge-limited current behavior, respectively. In retention and endurance tests, a resistance ratio of more than 1 order remains after 10(4) s at 90 degrees C and after 100 dc voltage sweeping cycles. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3360181] All rights reserved.
URI: http://hdl.handle.net/11536/6214
http://dx.doi.org/10.1149/1.3360181
ISSN: 1099-0062
DOI: 10.1149/1.3360181
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 13
Issue: 6
起始頁: II191
結束頁: II193
Appears in Collections:Articles