Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT

標題:	Low-Threshold-Voltage TaN/LaTiO n-MOSFETs With Small EOT
作者:	Lin, S. H. Cheng, C. H. Chen, W. B. Yeh, F. S. Chin, Albert 機械工程學系電子工程學系及電子研究所 Department of Mechanical Engineering Department of Electronics Engineering and Institute of Electronics
關鍵字:	LaTiO;low V(t);solid-phase diffusion (SPD)
公開日期:	1-九月-2009
摘要:	In this letter, we report a low threshold voltage (VI) of 0.12 V in self-aligned gate-first TaN/LaTiO n-MOSFETs, at an equivalent oxide thickness of only 0.63 run. This was achieved by using Ni-induced solid-phase diffusion of SiO(2)-covered Ni/Sb that reduced the high-kappa dielectric interfacial reactions.
URI:	http://dx.doi.org/10.1109/LED.2009.2027723 http://hdl.handle.net/11536/6730
ISSN:	0741-3106
DOI:	10.1109/LED.2009.2027723
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	30
Issue:	9
起始頁:	999
結束頁:	1001
顯示於類別：	期刊論文

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