标题: | 在矽基板上成长矽锗、砷化镓及硒化锌异质结构之研究 The Study of Heterostructure Growth of SiGe, GaAs and ZnSe on Si Substrate |
作者: | 杨宗熺 Tsung-Hsi Yang 张俊彦 张翼 Chun-Yen Chang Edward Yi Chang 材料科学与工程学系 |
关键字: | 异质结构;锗;砷化镓;硒化锌;磊晶成长;应变能界面;SiGe;GaAs;ZnSe;UHVCVD;MOCVD;MBE |
公开日期: | 2004 |
摘要: | 磊晶成长异质结构于矽基板上是非常热门且有价值的研究,但由于矽的晶格常数与锗、砷化镓及硒化锌约有4.2% 以上的晶格不匹配,因此无法直接在矽基板上磊晶成长出高品质的锗、砷化镓及硒化锌等异质结构。在此研究中,我们利用矽锗半导体材料当作成长锗磊晶层的成长缓冲层,藉由改变在矽锗磊晶层中的锗含量使其最终达到纯锗磊层。为了有效降低锗磊晶层中的缺陷密度,我们提出了应变能界面局部控制与阻挡技术,其中应变能界面是由两层适当锗含量磊晶层之界面应力场产生(两层锗含量差约5%),此应力场可以弯曲并阻挡线缺陷的传递。利用此技术我们成功的在矽基板上成长了高品质的锗磊晶层。锗磊晶层的缺陷密度约3×106 cm-2,总磊晶厚度小于2.6μm,表面粗糙度约3.2Å。此外,我们也利用MOCVD及MBE成长技术结合锗/矽锗缓冲层,成功的将具有优良光或电特性的砷化镓及硒化锌异质材料磊晶成长于矽基板上。实验结果显示,砷化镓磊晶层的缺陷密度接近3×106 cm-2,总磊晶厚度小于5μm。硒化锌磊晶层的缺陷密度接近3×106 cm-2,总磊晶厚度小于5μm,光学特性接近块材的硒化锌材料。此方法的好处为可以改善在矽基板上制作异质结构元件的导热性、提高制造率、降低制造成本又可与成熟之矽制程技术相容。基于这些特性,此研究结果对未来将光及电元件整合于同一矽晶片上提供一个新的思考方向。 An interface-blocking mechanism was proposed to reduce the threading dislocations in the SiGe and Ge layers grown on the Si (100) substrates. In this study, epitaxial Si1-xGex/ Si1-(x-y)Gex-y and Ge/ SiyGe1-y layers were grown by UHV/CVD. It was found surprisingly that if the Ge composition, y, was varied across the interface of Si1-xGex/ Si1-(x-y)Gex-y or Ge/ SiyGe1-y above a certain value, most of the threading dislocations appear to be blocked and confined in the underlying Si1-(x-y)Gex-y or SiyGe1-y layer by the interface. This finding provides a simple way to grow high-quality relaxed SiGe and Ge layers on the Si substrates. The growth of high-quality epitaxial Ge layers on a Si (100) substrate was demonstrated by using this method. Experimental results showed that the dislocation density in the top Ge layer was greatly reduced, and the surface was very smooth, while the total thickness of the structure was only 2.6μm. It implies that this finding can provide a virtual substrate for growing GaAs and ZnSe on Si. The growth of the high-quality GaAs and ZnSe layers on the Ge/GexSi1-x/Si virtual substrates is demonstrated in this work with the dislocation density of GaAs and ZnSe about 3×10-6 cm-2 and the epitaxial layers also show a excellent optical characteristics. The total thickness of the GaAs/Si and ZnSe/Si was only 5.1□m. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT008918808 http://hdl.handle.net/11536/77846 |
显示于类别: | Thesis |
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