標題: | 應用於WiMAX之雙增益模式互補金氧半低雜訊放大器設計 Design of Dual Gain Mode CMOS LNA for WiMAX Applications |
作者: | 梁書旗 Shu-chi Liang 溫瓌岸 溫文燊 Kuei-Ann Wen Wen-Shen Wuen 電子研究所 |
關鍵字: | 雙增益模式;低雜訊放大器;多閘極電晶體方法;行為模型;互補金氧半導體;Dual gain mode;LNA;MGTR topology;Behavior model;CMOS;WiMAX |
公開日期: | 2006 |
摘要: | 本論文主要討論設計一應用於WiMAX之雙增益模式射頻低雜訊放大器。雙增益模式之設計可提高電路的動態操作範圍。兩模式只需用同一套輸入端匹配電路。多閘極電晶體技術加入此電路中以提高線性度。本電路以0.13微米CMOS製程製作,操作頻率範圍為2.3至2.7GHz。此電路建立了行為模型,並藉此行為模型來幫助縮短電路設計週期。 In this thesis, a dual-gain mode design of a direct-conversion CMOS RF LNA for IEEE 802.16e (WiMAX) applications is presented. Two gain modes with one switch stage are designed in the purposed LNA to enlarge the dynamic range. It needs only one common input matching network for different gain modes. Multiple Gated Transistors topology is integrated for linearity enhancement. The circuit is fabricated in 0.13□m CMOS process, and it is designed for operation frequency of 2.3 to 2.7 GHz. A behavior model of the circuit is constructed to facilitate the design cycle. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009411676 http://hdl.handle.net/11536/80590 |
Appears in Collections: | Thesis |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.