標題: 11.8 GHz GaInP/GaAs HBT dynamic frequency divider using HLO-FF technique
作者: Wei, Hung-Ju
Meng, Chinchun
Chang, YuWen
Huang, Guo-Wei
電信工程研究所
Institute of Communications Engineering
關鍵字: frequency divider;GaInP/GaAS HBT;emitter coupled logic;static;HLO-FF
公開日期: 1-Oct-2008
摘要: An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO-FF (high-speed latching operating flip-flop) structure is demonstrated rot 4.1-11.8 GHz. In this experiment, et conventional static,frequency divider using the same cut-off-frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of f(T) and optimizing the I(read)/I(latch) tire maximum operating frequency of the HLO-FF is greatly improved date to higher slew-rate and smaller voltage swing. The speed of HLO-FF is faster about 48% than that of static structure. The core current is 13 mA cot the supply voltage of 5V. (C) 2005 Wiley Periodicals, Inc.
URI: http://dx.doi.org/10.1002/mop.23740
http://hdl.handle.net/11536/8284
ISSN: 0895-2477
DOI: 10.1002/mop.23740
期刊: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Volume: 50
Issue: 10
起始頁: 2642
結束頁: 2645
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