11.8 GHz GaInP/GaAs HBT dynamic frequency divider using HLO-FF technique

Abstract

An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO-FF (high-speed latching operating flip-flop) structure is demonstrated rot 4.1-11.8 GHz. In this experiment, et conventional static,frequency divider using the same cut-off-frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of f(T) and optimizing the I(read)/I(latch) tire maximum operating frequency of the HLO-FF is greatly improved date to higher slew-rate and smaller voltage swing. The speed of HLO-FF is faster about 48% than that of static structure. The core current is 13 mA cot the supply voltage of 5V. (C) 2005 Wiley Periodicals, Inc.