標題: Design and analysis of CMOS subharmonic injection-locked frequency triplers
作者: Chen, Min-Chiao
Wu, Chung-Yu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: frequency tripler;injection-locked oscillators (ILOs);RIF CMOS;voltage-controlled oscillator (VCO)
公開日期: 1-Aug-2008
摘要: K- and V-band CMOS differential subharmonic injection-locked frequency triplers (ILFTs) are proposed, analyzed, and designed. Based on the proposed ILFT structure, models for the injection-locking range and the output phase noise are developed. A K-band ILFT is designed and fabricated using 0.18-mu m standard CMOS technology. The measured injection-locking range is 1092 MHz with a dc power consumption of 0.45 mW and an input injection power of 4 dBm. The harmonic rejection ratios are 22.65, 30.58, 29.29, 40.35 dBc for the first, second, fourth, and fifth harmonics, respectively. The total injection-locking range of the K-band ILFT can achieve 3915 MHz when the varactors are used and the dc power consumption is increased to 2.95 mW. A V-band ILFT is also designed. and fabricated using 0.13-mu m standard CMOS technology. The measured injection-locking range is 1422 MHz with 1.86-mW dc power consumption and 6-dBm input injection power. The injection-locking range of the proposed ILFT is similar to the tuning range of a conventional varactor-tuned bulk-CMOS voltage-controlled oscillator (WO). Moreover, the proposed ILFT has a greater output power and a lower dc power consumption level than a VCO. As a result, it is feasible to use the proposed ILFT in low-power millimeter-wave synthesizers.
URI: http://dx.doi.org/10.1109/TMTT.2008.926566
http://hdl.handle.net/11536/8493
ISSN: 0018-9480
DOI: 10.1109/TMTT.2008.926566
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 56
Issue: 8
起始頁: 1869
結束頁: 1878
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