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dc.contributor.authorChen, William P. N.en_US
dc.contributor.authorSu, Pinen_US
dc.contributor.authorGoto, K.en_US
dc.date.accessioned2014-12-08T15:11:16Z-
dc.date.available2014-12-08T15:11:16Z-
dc.date.issued2008-07-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2008.2000909en_US
dc.identifier.urihttp://hdl.handle.net/11536/8646-
dc.description.abstractThis letter provides an experimental assessment of Coulomb scattering mobility for advanced short-channel strained devices. By accurate mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel nMOSFETs. This letter indicates that the Coulomb mobility has significant stress dependency. Moreover, the stress sensitivity of the Coulomb mobility shows strong temperature, dependence. Because it is the interface scattering that counteracts the stress sensitivity of the bulk-impurity-limited mobility, further reducing the interface charges will be crucial to future mobility scaling.en_US
dc.language.isoen_USen_US
dc.subjectcoulomb mobilityen_US
dc.subjectMOSFETen_US
dc.subjectstrained siliconen_US
dc.titleImpact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2008.2000909en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume29en_US
dc.citation.issue7en_US
dc.citation.spage768en_US
dc.citation.epage770en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000257626000036-
dc.citation.woscount8-
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