完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, William P. N. | en_US |
dc.contributor.author | Su, Pin | en_US |
dc.contributor.author | Goto, K. | en_US |
dc.date.accessioned | 2014-12-08T15:11:16Z | - |
dc.date.available | 2014-12-08T15:11:16Z | - |
dc.date.issued | 2008-07-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2008.2000909 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8646 | - |
dc.description.abstract | This letter provides an experimental assessment of Coulomb scattering mobility for advanced short-channel strained devices. By accurate mobility extraction under various temperatures, we examine the impact of process-induced uniaxial strain on Coulomb mobility in short-channel nMOSFETs. This letter indicates that the Coulomb mobility has significant stress dependency. Moreover, the stress sensitivity of the Coulomb mobility shows strong temperature, dependence. Because it is the interface scattering that counteracts the stress sensitivity of the bulk-impurity-limited mobility, further reducing the interface charges will be crucial to future mobility scaling. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | coulomb mobility | en_US |
dc.subject | MOSFET | en_US |
dc.subject | strained silicon | en_US |
dc.title | Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETs | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2008.2000909 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 29 | en_US |
dc.citation.issue | 7 | en_US |
dc.citation.spage | 768 | en_US |
dc.citation.epage | 770 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000257626000036 | - |
dc.citation.woscount | 8 | - |
顯示於類別: | 期刊論文 |