| 標題: | 高效能動態起始電壓絕緣層上矽元件 High Performance DTMOS SOI Devices |
| 作者: | 趙天生 TIEN-SHENGCHAO 國立交通大學電子物理學系 |
| 公開日期: | 2003 |
| 官方說明文件#: | NSC92-2215-E009-070 |
| URI: | http://hdl.handle.net/11536/92168 https://www.grb.gov.tw/search/planDetail?id=873573&docId=167366 |
| Appears in Collections: | Research Plans |
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- High-voltage and high-temperature applications of DTMOS with reverse Schottky barrier on substrate contacts / Chao, TS;Lee, YJ;Huang, TY
- Impacts of gate structure on dynamic threshold SOI nMOSFETs / Lo, WC;Chang, SJ;Chang, CY;Chao, TS
- High-performance and high-reliability 80-nm gate-length DTMOS with indium super steep retrograde channel / Chang, SJ;Chang, CY;Chen, CM;Chao, TS;Lee, YJ
- High voltage applications and NBTI effects of DT-pMOSFETS with reverse Schottky substrate contacts / Lee, YJ;Chao, TS;Huang, TY
- High performance 0.1 mu m dynamic threshold MOSFET using indium channel implantation / Chang, SJ;Chang, CY;Chao, TS;Huang, TY
- 深次微米的N型金氧半電晶體對銦原子超陡分佈之研究 / 李耀仁;Yao-jen Lee;施敏;趙天生;S.M.Sze
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