蕭特基能障SOI金氧半電晶體元件研製與分析(II)

標題:	蕭特基能障SOI金氧半電晶體元件研製與分析(II) Fabrication and Characterization of SOI Schottky Barrier MOSFET (II)
作者:	黃調元 TIAO-YUANHUANG 交通大學電子工程系
公開日期:	2002
官方說明文件#:	NSC91-2215-E009-042
URI:	http://hdl.handle.net/11536/93069 https://www.grb.gov.tw/search/planDetail?id=784397&docId=150768
Appears in Collections:	Research Plans

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