| 標題: | 低溫成長絕緣矽氧化膜設備之研製(I) Development of Equipment for Room-Temperature Deposited Silicon Oxide (I) |
| 作者: | 葉清發 交通大學電子工程系 |
| 關鍵字: | 室溫沈積法;選擇性成長;氟;半導體;氧化膜;Room temperature deposition;LPD;Fluorine;Semiconductor;Oxide |
| 公開日期: | 1999 |
| 官方說明文件#: | NSC88-2215-E009-036 |
| URI: | http://hdl.handle.net/11536/94167 https://www.grb.gov.tw/search/planDetail?id=444368&docId=80481 |
| 顯示於類別： | 研究計畫 |
- 低溫成長絕緣矽氧化膜設備之研製 (III) / 葉清發
- Stress in liquid-phase deposited oxide films / Yeh, CF;Lin, SS;Lur, WT
- Novel low-stress SiO2-F-x(x) film deposited by room-temperature liquid-phase deposition method / Yeh, CF;Lin, SS
- Smart dielectrics of fluorinated silicon glass prepared by liquid phase deposition method / Yeh, CF;Chen, TF;Lee, YC;Liu, CH;Lin, SS
- 室溫液相沉積氧化矽(SiO2-xFx)薄膜之研究與應用 / 陳俊麟;Chun-Lin Chen;葉清發;Ching-Fa Yeh
- EFFECTS OF PLASMA TREATMENT ON THE PROPERTIES OF ROOM-TEMPERATURE LIQUID-PHASE DEPOSITED (LPD) OXIDE-FILMS / YEH, CF;LIN, SS
- CONTROLLING FLUORINE CONCENTRATION AND THERMAL ANNEALING EFFECT ON LIQUID-PHASE DEPOSITED SIO2-XFX FILMS / YEH, CF;CHEN, CL
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