深次微米T型閘極金氧半電晶體之研製

標題:	深次微米T型閘極金氧半電晶體之研製 Development and Characterization of a Novel Method for Fabricating Deep-Micron Si MOSFET's with T-shaped Gate
作者:	黃調元 TIAO-YUANHUANG 交通大學電子工程系
關鍵字:	金氧半場效電晶體;窄線寬效應;橋接效應;深次微米;MOSFET;Narrow line-width effect;Bridging effect;Deep submicrometer
公開日期:	1999
官方說明文件#:	NSC88-2215-E009-030
URI:	http://hdl.handle.net/11536/94236 https://www.grb.gov.tw/search/planDetail?id=418076&docId=74161
Appears in Collections:	Research Plans

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