深次微米元件內熱載子效應所造成汲極漏電流特性退化之研究

標題:	深次微米元件內熱載子效應所造成汲極漏電流特性退化之研究 Hot Carrier Stress Induced Drain Leakage Current Degradation in Deep Submicron MOSFET's
作者:	汪大暉 WANG TAHUI 交通大學電子工程系
關鍵字:	深次微米;熱載子;洩漏電流;退化;汲極;氧化層;金氧半場效電晶體;Deep submicrometer;Hot carrier;Leakage current;Degradation;Drain;Oxided layer;MOSFET
公開日期:	1999
官方說明文件#:	NSC88-2215-E009-042
URI:	http://hdl.handle.net/11536/94320 https://www.grb.gov.tw/search/planDetail?id=418062&docId=74158
Appears in Collections:	Research Plans

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