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dc.contributor.author汪大暉en_US
dc.contributor.authorWANG TAHUIen_US
dc.date.accessioned2014-12-13T10:37:11Z-
dc.date.available2014-12-13T10:37:11Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2215-E009-034zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94450-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=444198&docId=80441en_US
dc.description.sponsorship行政院國家科學委員會zh_TW
dc.language.isozh_TWen_US
dc.subject氧化層漏電流zh_TW
dc.subject暫態特性zh_TW
dc.subject物理機制zh_TW
dc.subject快閃記憶體zh_TW
dc.subject穿隧氧化層zh_TW
dc.subjectStress induced leakage current (SILC)en_US
dc.subjectTransient characteristicen_US
dc.subjectMechanismen_US
dc.subjectFlash EEPROMen_US
dc.subjectTunnel oxideen_US
dc.title穿隧氧化層內漏電流之暫態特性與物理機制zh_TW
dc.titleMechanisms and Transient Characteristics of Stress Induced Leakage Current (SILC) in Tunnel Oxidesen_US
dc.typePlanen_US
dc.contributor.department交通大學電子工程系zh_TW
Appears in Collections:Research Plans


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