完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 汪大暉 | en_US |
dc.contributor.author | WANG TAHUI | en_US |
dc.date.accessioned | 2014-12-13T10:37:11Z | - |
dc.date.available | 2014-12-13T10:37:11Z | - |
dc.date.issued | 1999 | en_US |
dc.identifier.govdoc | NSC88-2215-E009-034 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/94450 | - |
dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=444198&docId=80441 | en_US |
dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.subject | 氧化層漏電流 | zh_TW |
dc.subject | 暫態特性 | zh_TW |
dc.subject | 物理機制 | zh_TW |
dc.subject | 快閃記憶體 | zh_TW |
dc.subject | 穿隧氧化層 | zh_TW |
dc.subject | Stress induced leakage current (SILC) | en_US |
dc.subject | Transient characteristic | en_US |
dc.subject | Mechanism | en_US |
dc.subject | Flash EEPROM | en_US |
dc.subject | Tunnel oxide | en_US |
dc.title | 穿隧氧化層內漏電流之暫態特性與物理機制 | zh_TW |
dc.title | Mechanisms and Transient Characteristics of Stress Induced Leakage Current (SILC) in Tunnel Oxides | en_US |
dc.type | Plan | en_US |
dc.contributor.department | 交通大學電子工程系 | zh_TW |
顯示於類別: | 研究計畫 |