| 標題: | 深次微米MOSFET元件可靠性研究---子計畫二：利用改良式浮動閘極法測量氧化層內缺陷所造成之漏電流與理論分析(II) Theory and Characterization of Trap Induced Oxide Leakage Current by Using a Modified Floating Gate Technique(II) |
| 作者: | 汪大暉 WANG TAHUI 交通大學電子工程系 |
| 關鍵字: | 深次微米;金氧半場效電晶體;漏電流;浮動閘;量子效應;Deep submicron;MOSFET;Leakage current;Floating gate;Quantum effect |
| 公開日期: | 1998 |
| 官方說明文件#: | NSC87-2215-E009-044 |
| URI: | http://hdl.handle.net/11536/95068 https://www.grb.gov.tw/search/planDetail?id=396217&docId=69989 |
| Appears in Collections: | Research Plans |
