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Title: 深次微米元件研製及特性分析
Fabrication and Characterization of Deep Submicron Transistors
Authors: 黃調元
TIAO-YUANHUANG
交通大學電子工程系
Keywords: 深次微米;金氧半導體電晶體;短通道效應;SOI基片;Deep submicron;MOS transistor;Short channel effect;SOI substrate
Issue Date: 1997
Gov't Doc #: NSC86-2215-E009-046
URI: http://hdl.handle.net/11536/95480
https://www.grb.gov.tw/search/planDetail?id=278795&docId=50196
Appears in Collections:Research Plans


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