Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface

標題:	Improved external quantum efficiency of GaN p-i-n photodiodes with a TiO2 roughened surface
作者:	Lin, J. C. Su, Y. K. Chang, S. J. Lan, W. H. Huang, K. C. Cheng, Y. C. Lin, W. J. 電子物理學系 Department of Electrophysics
關鍵字:	gallium nitride (GaN);p-i-n;photodiodes (PDs);surface roughness;titanium dioxide (TiO2)
公開日期:	1-Jan-2008
摘要:	Gallium nitride p-i-n ultraviolet photodiodes (PDs) with a titanium dioxide (TiO2) nano-particles roughened surface have been fabricated. It was found that the responsivity and external quantum efficiency can be improved 60% on the surface roughened PDs. It was also found that light absorption can be enhanced from various incident angles by the TiO2 roughened surface. Furthermore, the high detectivity of 9.2 x 10(1.3) cm.Hz(1/2).W-1 can be achieved from the PD with a rough surface.
URI:	http://dx.doi.org/10.1109/LPT.2007.915620 http://hdl.handle.net/11536/9879
ISSN:	1041-1135
DOI:	10.1109/LPT.2007.915620
期刊:	IEEE PHOTONICS TECHNOLOGY LETTERS
Volume:	20
Issue:	1-4
起始頁:	285
結束頁:	287
Appears in Collections:	Articles

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