1. You are Here：

Browsing by Author Feng, MS

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 21 to 40 of 92 < previous   next >
Issue DateTitleAuthor(s)
1-Dec-1995Effects of rapid thermal annealing on Si delta-doped GaInP grown by low pressure metalorganic chemical vapor depositionWang, CJ; Feng, MS; Chan, SH; Wu, JW; Chang, CY; Sze, SM; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-Jun-1996Effects of the rear interface states and fixed charges on the electrical characteristics of thin film transistors with thin amorphous silicon layersTai, YH; Su, FC; Feng, MS; Cheng, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
31-Oct-1997Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technologyWang, YL; Liu, C; Feng, MS; Dun, JW; Chou, KS; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-May-1996Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structuresTai, YH; Su, FC; Chang, WS; Feng, MS; Cheng, HC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-Mar-2002Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurryHsu, JW; Chiu, SY; Tsai, MS; Dai, BT; Feng, MS; Shih, HC; 材料科學與工程學系; Department of Materials Science and Engineering
1-Feb-2002Electrochemically deposited Pd-induced crystallization of parallel needlelike polycrystalline silicon from prepatterned amorphous silicon thin filmsChao, CW; Hu, GR; Wu, YS; Chen, YC; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-May-2002Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion abilityLin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jul-2003Etching damages on AlGaN, GaN and InGaN caused by hybrid inductively coupled plasma etch and photoenhanced chemical wet etch by Schottky contact characterizationsFang, CY; Huang, WJ; Chang, EY; Lin, CF; Feng, MS; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
1-Jan-1998The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detectionWang, YL; Liu, C; Feng, MS; Tseng, WT; 材料科學與工程學系; Department of Materials Science and Engineering
1-Jan-1998The exothermic reaction and temperature measurement for tungsten CMP technology and its application on endpoint detectionWang, YL; Liu, C; Feng, MS; Tseng, WT; 材料科學與工程學系; Department of Materials Science and Engineering
1995Fabrication and characterization of the Pd-silicided emitters for field-emission devicesWang, CC; Ku, TK; Feng, MS; Hsieh, IJ; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1997Growth and characterizations of GaN on SiC substrates with buffer layersLin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-Sep-1997Growth and characterizations of GaN on SiC substrates with buffer layersLin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
15-May-1996Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor depositionWang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
15-May-1996Growth and electrical characterization of Si delta-doped GaInP by low pressure metalorganic chemical vapor depositionWang, CJ; Feng, MS; Chan, SH; Chang, CY; Wu, JH; Sze, SM; 材料科學與工程學系; 電控工程研究所; Department of Materials Science and Engineering; Institute of Electrical and Control Engineering
1-May-1998Growth of MgWO4 phosphor by RF magnetron sputteringChu, JP; Hsieh, IJ; Chen, JT; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-Mar-2006High-selectivity damascene chemical mechanical polishingChiu, SY; Wang, YL; Liu, CP; Chang, SC; Hwang, GJ; Feng, MS; Chen, CF; 材料科學與工程學系; Department of Materials Science and Engineering
3-Apr-2000Improved contact performance of GaN film using Si diffusionLin, CF; Cheng, HC; Chi, GC; Bu, CJ; Feng, MS; 材料科學與工程學系; 電子工程學系及電子研究所; 奈米中心; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-Mar-2003Improving the quality of electroplated copper films by rapid thermal annealingChang, SC; Shieh, JM; Dai, BT; Feng, MS; Wang, YL; 材料科學與工程學系; Department of Materials Science and Engineering
15-Jan-2004Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallizationCheng, YL; Wang, YL; Liu, CP; Wu, YL; Lo, KY; Liu, CW; Lan, JK; Ay, C; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
Showing results 21 to 40 of 92 < previous   next >