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Showing results 23 to 42 of 50 < previous   next >
Issue DateTitleAuthor(s)
1-Aug-2010High-Performance Metal-Insulator-Metal Capacitors With HfTiO/Y2O3 Stacked DielectricTsui, Bing-Yue; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015Impact of Nanoscale Polarization Relaxation on Endurance Reliability of One-Transistor Hybrid Memory Using Combined Storage MechanismsChiu, Yu-Chien; Chang, Chun-Yen; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Lee, Min-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2019Impact of Zirconium Doping on Steep Subthreshold Switching of Negative Capacitance Hafnium Oxide Based TransistorsCheng, Chun-Hu; Lin, Ming-Huei; Chen, Hsin-Yu; Fan, Chia-Chi; Liu, Chien; Hsu, Hsiao-Hsuan; Chang, Chun-Yen; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Jan-2019Implementation of Dopant-Free Hafnium Oxide Negative Capacitance Field-Effect TransistorCheng, Chun-Hu; Fan, Chia-Chi; Tu, Chun-Yuan; Hsu, Hsiao-Hsuan; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2014Improved high-temperature switching characteristics of Y2O3/TiOx resistive memory through carrier depletion effectZheng, Zhi-Wei; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Chen, Po-Chun; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2019Improved Negative-Capacitance Switch of Ferroelectric Field Effect Transistor Using Defect Passivation EngineeringCheng, Chun-Hu; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Wang, Shih-An; Chang, Chun-Yen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
5-Dec-2018Improved Thermal Stability and Stress Immunity in Highly Scalable Junctionless FETs Using Enhanced-Depletion ChannelsLiu, Chien; Cheng, Chun-Hu; Lin, Ming-Huei; Shih, Yi-Jia; Hung, Yu-Wen; Fan, Chia-Chi; Chen, Hsuan-Han; Chen, Wan-Hsin; Hsu, Chih-Chieh; Shih, Bing-Yang; Chiu, Yu-Chien; Chou, Wu-Ching; Hsu, Hsiao-Hsuan; Chang, Chun-Yen; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
15-Sep-2015Improvement of dielectric flexibility and electrical properties of mechanically flexible thin film devices using titanium oxide materials fabricated at a very low temperature of 100 degrees CHsu, Hsiao-Hsuan; Chiu, Yu-Chien; Chiou, Ping; Cheng, Chun-Hu; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018Interface Engineering of Ferroelectric Negative Capacitance FET for Hysteresis-Free Switch and Reliability ImprovementFan, Chia-Chi; Tu, Chun-Yuan; Lin, Ming-Huei; Chang, Chun-Yen; Cheng, Chun-Hu; Chen, Yen Liang; Liou, Guan-Lin; Liu, Chien; Chou, Wu-Ching; Hsu, Hsiao-Hsuan; 交大名義發表; 電子物理學系; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2015Interface Polarization Fluctuation Effect of Ferroelectric Hafnium-Zirconium-Oxide Ferroelectric Memory with Nearly Ideal Subthreshold SlopeChiu, Yu-Chien; Cheng, Chun-Hu; Fan, Chia-Chi; Chen, Po-Chun; Chang, Chun-Yen; Lee, Min-Hung; Liu, Chien; Yen, Shiang-Shiou; Hsu, Hsiao-Hsuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2017Investigation of Double-Snapback Characteristic in Resistor-Triggered SCRs Stacking StructureYen, Shiang-Shiou; Cheng, Chun-Hu; Fan, Chia-Chi; Chiu, Yu-Chien; Hsu, Hsiao-Hsuan; Lan, Yu-Pin; Chang, Chun-Yen; 電機學院; 電子工程學系及電子研究所; 電子與資訊研究中心; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics; Microelectronics and Information Systems Research Center
1-Feb-2019Investigation of Gate-Stress Engineering in Negative Capacitance FETs Using Ferroelectric Hafnium Aluminum OxidesCheng, Chun-Hu; Fan, Chia-Chi; Liu, Chien; Hsu, Hsiao-Hsuan; Chen, Hsuan-Han; Hsu, Chih-Chieh; Wang, Shih-An; Chang, Chun-Yen; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Jan-2019Investigation of Phase Transformation in HfO2 Ferroelectric Capacitor by Means of a ZrO2 Capping LayerLiu, Kuan-Wei; Chen, Hsuan-Han; Huang, Zhong-Ying; Wang, Wei-Chun; Fan, Yu-Chi; Lin, Ching-Liang; Hsu, Chih-Chieh; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Chang, Chun-Yen; Lin, Chien-Chung; Cheng, Chun-Hu; 交大名義發表; 電子物理學系; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018Investigation of Polarization Hysteresis and Transient Current Switching in Ferroelectric Aluminum-Doped Hafnium OxidesLiu, Chien; Fan, Chia-Chi; Tseng, Chih-Yang; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Chen, Yen-Liang; Chang, Chun-Yen; Chou, Wu-Ching; Lin, Chien-Liang; Fan, Yu-Chi; Lee, Tsung-Ming; 光電系統研究所; 電子物理學系; 電子工程學系及電子研究所; Institute of Photonic System; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-Aug-2019Investigation on polarization characteristics of ferroelectric memories with thermally stable hafnium aluminum oxidesChang, Tun-Jen; Liu, Chien; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Chen, Hsuan-Han; Chen, Wan-Hsin; Fan, Yu-Chi; Lee, Tsung-Ming; Lin, Chien-Liang; Mae, Jun; Zheng, Zhi-Wei; Cheng, Chun-Hu; Wang, Shih-An; Chang, Chun-Yen; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2013A Low Operating Voltage IGZO TFT Using LaLuO3 Gate DielectricChou, Kun-I; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Lee, Kai-Yu; Li, Shang-Rong; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015Low Power 1T DRAM/NVM Versatile Memory Featuring Steep Sub-60-mV/decade Operation, Fast 20-ns Speed, and Robust 85 degrees C-Extrapolated 10(16) EnduranceChiu, Yu-Chien; Cheng, Chun-Hu; Chang, Chun-Yen; Lee, Min-Hung; Hsu, Hsiao-Hsuan; Yen, Shiang-Shiou; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2014Low power resistive random access memory using interface-engineered dielectric stack of SiOx/a-Si/TiOy with 1D1R-like structureCheng, Chun-Hu; Chou, K. I.; Zheng, Zhi-Wei; Hsu, Hsiao-Hsuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2019Negative Capacitance CMOS Field-Effect Transistors with Non-Hysteretic Steep Sub-60mV/dec Swing and Defect-Passivated Multidomain SwitchingLiu, Chien; Chen, Hsuan-Han; Hsu, Chih-Chieh; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
2016On the Variability of Threshold Voltage Window in Gate-Injection Versatile Memories with Sub-60mV/dec Subthreshold Swing and 10(12)-Cycling EnduranceChiu, Yu-Chien; Chang, Chun-Yen; Yen, Shiang-Shiou; Fan, Chia-Chi; Hsu, Hsiao-Hsuan; Cheng, Chun-Hu; Chen, Po-Chun; Chen, Po-Wei; Liou, Guan-Lin; Lee, Min-Hung; Liu, Chien; Chou, Wu-Ching; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
Showing results 23 to 42 of 50 < previous   next >