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顯示 41 到 60 筆資料，總共 136 筆 < 上一頁   下一頁 >
公開日期標題作者
1-三月-2000Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7Wu, YH; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2005Germanium pMOSFETs with Schottky-barrier germanide S/D, high-kappa gate dielectric and metal gateZhu, SY; Li, R; Lee, SJ; Li, MF; Du, AY; Singh, J; Zhu, CX; Chin, A; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2006HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicideWu, CH; Hung, BF; Chin, A; Wang, SJ; Yen, FY; Hou, YT; Jin, Y; Tao, HJ; Chen, SC; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003High density RF MIM capacitors using high-kappa AlTaOx dielectricsHuang, CH; Yang, MY; Chin, A; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High hole mobility of Al2O3 mosfets on dislocation free Ge-on-insulator wafersChin, A; Yu, DS; Wu, CH; Huang, CH; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
6-五月-1996High optical quality of strained (111)B In0.12Ga0.88As/GaAs and In0.12Ga0.88As/Al0.2Ga0.8As multiple quantum wellsChin, A; Lin, BC; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
20-九月-2004High performance CPW and microstrip ring resonators on silicon substratesChen, CC; Hung, BF; Chin, A; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High performance metal-gate/high-kappa, MOSFETs and GaAs compatible RF passive devices on Ge-on-Insulator tlechnologyChin, A; Kao, HL; Yu, DS; Liao, CC; Zhu, C; Li, MF; Zhu, SY; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-六月-1996High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substratesChin, A; Lee, K; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-六月-1996High quality Al(Ga)As/GaAs/Al(Ga)As quantum wells grown on (111)A GaAs substratesChin, A; Lee, K; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
9-九月-1996High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees CChin, A; Lin, BC; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-九月-1996High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees CChin, A; Lin, BC; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000High quality La2O3 and Al2O3 gate dielectrics with equivalent oxide thickness 5-10 angstromChin, A; Wu, YH; Chen, SB; Liao, CC; Chen, WJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2000High temperature formed SiGeP-MOSFET's with good device characteristicsWu, YH; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2006High work function IrxSi gates on HfAlON p-MOSFETsWu, CH; Yu, DS; Chin, A; Wang, SJ; Li, MF; Zhu, C; Hung, BE; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2003High-density MIM canpacitors using AlTaOx dielectricsYang, MY; Huang, CH; Chin, A; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2003A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectricsYu, XF; Zhu, CX; Hu, H; Chin, A; Li, MF; Cho, BJ; Kwong, DL; Foo, PD; Yu, MB; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2002High-density MIM capacitors using Al2O3 and AlTiOx dielectricsChen, SB; Lai, CH; Chin, A; Hsieh, JC; Liu, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004High-density RF MIM capacitors using high-k La2O3 dielectricsYang, MY; Yu, DS; Chin, A; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2005High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applicationsChiang, KC; Huang, CC; Chin, A; Chen, WJ; McAlister, SP; Chiu, HF; Chen, JR; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
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