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公開日期標題作者
1-五月-2003High-density MIM canpacitors using AlTaOx dielectricsYang, MY; Huang, CH; Chin, A; Zhu, CX; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2002High-density MIM capacitors using Al2O3 and AlTiOx dielectricsChen, SB; Lai, CH; Chin, A; Hsieh, JC; Liu, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2006High-performance SrTiO3 MIM capacitors for analog applicationsChiang, K. C.; Huang, Ching-Chien; Chen, G. L.; Chen, Wen Jauh; Kao, H. L.; Wu, Yung-Hsien; Chin, Albert; McAlister, Sean P.; 奈米科技中心; Center for Nanoscience and Technology
1-三月-2007High-temperature leakage improvement in metal-insulator-metal capacitors by work-function tuningChiang, K. C.; Cheng, C. H.; Pan, H. C.; Hsiao, N.; Chou, C. P.; Chin, Albert; Hwang, H. L.; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-四月-1999Leakage current reduction of chemical-vapor-deposited Ta2O5 films on rugged polycrystalline silicon electrode for dynamic random access memory applicationLin, M; Chang, CY; Huang, TY; Shieh, WY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十二月-2007Microstructure evolution and dielectric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with Cr interlayerHo, Chia-Cheng; Chiou, Bi-Shiou; Chang, Li-Chun; 電子工程學系及電子研究所; Innovative Packaging Research Center; Department of Electronics Engineering and Institute of Electronics; Innovative Packaging Research Center
10-八月-2017Nano assembly of N-doped graphene quantum dots anchored Fe3O4/halloysite nanotubes for high performance supercapacitorGanganboina, Akhilesh Babu; Chowdhury, Ankan Dutta; Doong, Ruey-an; 環境工程研究所; Institute of Environmental Engineering
1-七月-1999A novel cross-coupled inter-poly-oxide capacitor for mixed-mode CMOS processesChen, MJ; Hou, CS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2005A novel program-erasable high-(K) A1N-Si MIS capacitorLai, CH; Chin, A; Hung, BF; Cheng, CF; Yoo, WJ; Li, MF; Zhu, CX; McAlister, SP; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2007A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retentionYang, H. J.; Chin, Albert; Chen, W. J.; Cheng, C. F.; Huang, W. L.; Hsieh, I. J.; McAlister, S. P.; 奈米科技中心; Center for Nanoscience and Technology
1-九月-2006RFIC TaN/SrTio(3)/TaN MIM capacitors with 35 fF/mu m(2) capacitance densityHuang, C. C.; Chiang, K. C.; Kao, H. L.; Chin, Albert; Chen, W. J.; 奈米科技中心; Center for Nanoscience and Technology
1-六月-1998Rugged surface polycrystalline silicon film formed by rapid thermal chemical vapor deposition for dynamic random access memory stacked capacitor applicationLin, M; Chang, CY; Huang, TY; Kuo, UJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Surface Treatments on the Characteristics of Metal-Oxide Semiconductor CapacitorsHorng, Ray-Hua; Tseng, Ming-Chun; Wuu, Dong-Sing; 交大名義發表; 電子工程學系及電子研究所; National Chiao Tung University; Department of Electronics Engineering and Institute of Electronics
20-十二月-2006Thermal stability and electric properties of Ba0.7Sr0.3TiO3 parallel plate capacitor with nano-Cr interlayerHo, Chia-Cheng; Chiou, Bi-Shiou; Chang, Li-Chun; Chou, Chen-Chia; Liou, Bo-Heng; Yu, Chin-Chieh; 電子工程學系及電子研究所; Innovative Packaging Research Center; Department of Electronics Engineering and Institute of Electronics; Innovative Packaging Research Center
2005Very high density RF MIM capacitor compatible with VLSIChiang, KC; Lai, CH; Chin, A; Kao, HL; McAlister, SP; Chi, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2003Very high density RF MIM capacitors (17 fF/mu m(2) using high-kappa Al2O3 doped Ta2O5 dielectricsYang, MY; Huang, CH; Chin, A; Zhu, CX; Cho, BJ; Li, MF; Kwong, DL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2005Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectricChiang, KC; Lai, CH; Chin, A; Wang, TJ; Chiu, HF; Chen, JR; McAlister, SP; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
1996低溫燒結BME-Z5U鈦酸鋇陶瓷電容器之研究林煜文; Lin, E-Won; 曾俊元; Tseng Tseung-Yuen; 電子研究所
2010動態隨機存取記憶體(DRAM)電容清洗技術之研究吳慧盈; Ng, Wei Yeeng; 張立; Chang, Li; 工學院半導體材料與製程設備學程
2007可寫入抹除高介電常數氮氧化鉿金屬-絕緣層-矽 電容林俊賢; Chun-Hsien Lin; 荊鳳德; Albert Chin; 電機學院微電子奈米科技產業專班
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