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公開日期標題作者
1-四月-2018Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layerChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
11-九月-2017Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memoryChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Tsai, Tsung-Ling; Lin, Chun-An; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
1-一月-2020Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic LearningJung, Pei-Yu; Panda, Debashis; Chandrasekaran, Sridhar; Rajasekaran, Sailesh; Tseng, Tseung-Yuen; 交大名義發表; 材料科學與工程學系; 電子工程學系及電子研究所; National Chiao Tung University; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2019Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing SchemeChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
30-八月-2018The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devicesChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Aluguri, Rakesh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-十一月-2019Improving linearity by introducing Al in HfO2 as a memristor synapse deviceChandrasekaran, Sridhar; Simanjuntak, Firman Mangasa; Saminathan, R.; Panda, Debashis; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
9-四月-2020Neutral oxygen irradiation enhanced forming-less ZnO-based transparent analog memristor devices for neuromorphic computing applicationsSimanjuntak, Firman Mangasa; Ohno, Takeo; Chandrasekaran, Sridhar; Tseng, Tseung-Yuen; Samukawa, Seiji; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
20-九月-2017Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cellSimanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Pattanayak, Bhaskar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
1-十二月-2017Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cellSimanjuntak, Firman Mangasa; Singh, Pragya; Chandrasekaran, Sridhar; Lumbantoruan, Franky Juanda; Yang, Chih-Chieh; Huang, Chu-Jie; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 材料科學與工程學系; 資訊工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
17-八月-2020Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devicesChang, Lung-Yu; Simanjuntak, Firman Mangasa; Hsu, Chun-Ling; Chandrasekaran, Sridhar; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
19-十月-2018Switching Failure Mechanism in Zinc Peroxide-Based Programmable Metallization CellSimanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
1-五月-2019ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devicesSimanjuntak, Firman Mangasa; Chandrasekaran, Sridhar; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; 電機工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Electrical and Computer Engineering
顯示 1 到 12 筆資料，總共 12 筆