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顯示 1 到 19 筆資料，總共 19 筆
公開日期標題作者
1-四月-200510 Gbps InGaAs : Sb-G-aAs-GaAsP quantum well vertical cavity surface emitting lasers with 1.27 mu m emission wavelengthsChang, YH; Kuo, HC; Chang, YA; Chu, JT; Tsai, MY; Wang, SC; 光電工程學系; Department of Photonics
1-一月-2003Characteristics of vertical thermal/PECVD polysilicon oxides formed on the sidewall of polysilicon filmsLee, MZ; Chang, YA; Lee, CL; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2004Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWsChang, YH; Kuo, HC; Lai, FI; Chang, YA; Lu, CY; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
2005Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communicationKuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP; 光電工程學系; Department of Photonics
2005High temperature stability 850-nm In0.15Al0.08Ga0.77As/Al0.3Ga0.7As vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layerChang, YA; Lai, FI; Yu, HC; Kuo, HC; Laih, LW; Yu, CL; Wang, SC; 光電工程學系; Department of Photonics
1-三月-2005High-speed modulation of InGaAs : Sb-GaAs-GaAsP quantum-well vertical-cavity surface-emitting lasers with 1.27-mu m emission wavelengthKuo, HC; Chang, YH; Yao, HH; Chang, YA; Lai, FI; Tsai, MY; Wang, SC; 光電工程學系; Department of Photonics
8-八月-2005Improved photoluminescence of 1.26 mu m InGaAs/GaAs quantum wells assisted by Sb surfactant and indium-graded intermediate layersChang, YA; Kuo, HC; Chang, YH; Wang, SC; 光電工程學系; Department of Photonics
2004Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWsChang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
1-六月-2005Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasersChang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC; 光電工程學系; Department of Photonics
25-一月-2006MOCVD growth of highly strained 1.3 mu m InGaAs : Sb/GaAs vertical cavity surface emitting laserChang, YA; Chu, JT; Ko, CT; Kuo, HC; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
10-十二月-2004MOCVD growth of highly strained InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface-emitting lasers with 1.27 mu m emissionKuo, HC; Yao, HH; Chang, YH; Chang, YA; Tsai, MY; Hsieh, J; Chang, EY; Wang, SC; 材料科學與工程學系; 光電工程學系; Department of Materials Science and Engineering; Department of Photonics
10-五月-2006A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layerHuang, HW; Kao, CC; Chang, YA; Kuo, HC; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
2004Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriersChang, YA; Kuo, HC; Chang, YH; Wang, SC; Laih, LH; 光電工程學系; Department of Photonics
1-十一月-2004Simulation of 1300-nm In(0.4)Ga(0.6)As(0.986)N(0.014)/GaAs(1-x)N(x) quantum-well lasers with various GaAs(1-x)N(x) strain compensated barriersChang, YA; Kuo, HC; Chang, YH; Wang, SC; 光電工程學系; Department of Photonics
1-十一月-2004Simulation of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriersChang, YA; Kuo, HC; Chang, YH; Wang, SC; 光電工程學系; Department of Photonics
1-十一月-2005Simulation of InGaN quantum well laser performance using quaternary InAlGaN alloy as electronic blocking layerChang, YA; Luo, CY; Ku, HC; Kuo, YK; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
1-一月-2005Single mode 1.27-mu m InGaAS : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasersKuo, HC; Chang, YA; Chang, YH; Chu, JT; Tsai, MY; Wang, SC; 光電工程學系; Department of Photonics
1-一月-2005Single-mode 1.27-mu m InGaAs : Sb-GaAs-GaAsP quantum well vertical cavity surface emitting lasersKuo, HC; Chang, YH; Chang, YA; Lai, FI; Chu, JT; Tsai, MN; Wang, SC; 光電工程學系; Department of Photonics
1-一月-2006Theoretical and experimental analysis on InAlGaAs/AlGaAs active region of 850-nm vertical-cavity surface-emitting lasersChang, YA; Chen, JR; Kuo, HC; Kuo, YK; Wang, SC; 光電工程學系; Department of Photonics
顯示 1 到 19 筆資料，總共 19 筆