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公開日期標題作者
1-八月-2018Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAMWu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-十月-2017Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation TreatmentYuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-七月-2018Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memoryTseng, Yi-Ting; Chen, I-Chieh; Chang, Ting-Chang; Huang, J. C.; Shih, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Wang, Ming-Hui; Huang, Wei-Chen; Chen, Min-Chen; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-十一月-2018Enhancement of Surface Chemical and Physical Properties of Germanium-Sulfur Thin Film Using a Water-Supplemented Carbon Dioxide Supercritical Fluid Treatment TechniqueYang, Chih-Cheng; Chen, Po-Hsun; Shih, Chih-Cheng; Wang, Ming-Hui; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Chen, Wen-Chung; Chen, Min-Chen; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Huang, Jen-Wei; Sze, Simon M.; Chang, Ting-Chang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2020Improvement of Resistive Switching Characteristics in Zinc Oxide-Based Resistive Random Access Memory by Ammoniation AnnealingWu, Pei-Yu; Zheng, Hao-Xuan; Shih, Chih-Cheng; Chang, Ting-Chang; Chen, Wei-Jang; Yang, Chih-Cheng; Chen, Wen-Chung; Tai, Mao-Chou; Tan, Yung-Fang; Huang, Hui-Chun; Ma, Xiao-Hua; Hao, Yue; Tsai, Tsung-Ming; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-1970Indium Diffusion Behavior and Application in HfO2-Based Conductive Bridge Random Access MemoryZheng, Hao-Xuan; Shih, Chih-Cheng; Chang, Ting-Chang; Shih, Lin-Yi; Shih, Yao-Kai; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Yang, Chih-Cheng; Wu, Pei-Yu; Huang, Hui-Chun; Tsai, Tsung-Ming; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2019The influence of temperature on set voltage for different high resistance state in 1T1R devicesTan, Yung-Fang; Su, Yu-Ting; Chen, Min-Chen; Chang, Ting-Chang; Tsai, Tsung-Ming; Tseng, Yi-Ting; Yang, Chih-Cheng; Zheng, Hao-Xuan; Chen, Wen-Chung; Lin, Chun-Chu; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2019Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching MemoryLin, Chun-Chu; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Lin, Chih-Yang; Zheng, Hao-Xuan; Chen, Chun-Kuei; Huang, Wei-Chen; Chen, Wen-Chung; Huang, Hui-Chun; Tsai, Tsung-Ming; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2019Overcoming Limited Resistance in 1T1R RRAM Caused by Pinch-Off Voltage During Reset ProcessZheng, Hao-Xuan; Chen, Min-Chen; Chang, Ting-Chang; Su, Yu-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Wu, Pei-Yu; Tan, Yung-Fang; Xu, You-Lin; Zhang, Yong-Ci; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2018Performance improvement after nitridation treatment in HfO2-based resistance random-access memoryWang, Ming-Hui; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Tsai, Tsung-Ming; Zheng, Hao-Xuan; Wu, Pei-Yu; Huang, Hui-Chun; Chen, Wen-Chung; Huang, Jen-Wei; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2018Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access MemoryZheng, Hao-Xuan; Chang, Ting-Chang; Xue, Kan-Hao; Su, Yu-Ting; Wu, Cheng-Hsien; Shih, Chih-Cheng; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Chen, Chun-Kuei; Miao, Xiang-Shui; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1995低溫有機金屬氣相磊晶與砷離子佈植砷化鎵薄膜之結構、缺陷及電性研究陳文中; Chen, Wen-Chung; 張振雄; Chen-Shiung Chang; 光電工程學系
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