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Issue DateTitleAuthor(s)
2004Advanced calibration chambers for cone penetration testing in cohesionless soilsHuang, A. B.; Hsu, H. H.; 土木工程學系; Department of Civil Engineering
1-Aug-2011Bipolar switching characteristics of low-power Geo resistive memoryCheng, C. H.; Chen, P. C.; Liu, S. L.; Wu, T. L.; Hsu, H. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Characteristics of Cerium Oxide for Metal-Insulator-Metal CapacitorsCheng, C. H.; Hsu, H. H.; Chen, W. B.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2017Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illuminationChiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2014High Mobility InGaZnO Thin Film Transistor Using Narrow-Bandgap Titanium-Oxide Semiconductor as Channel Capping LayerHsu, H. H.; Chiou, P.; Chiu, Y. C.; Yen, S. S.; Chang, C. Y.; Cheng, C. H.; 電機工程學系; Department of Electrical and Computer Engineering
1-Sep-2013High performance IGZO/TiO2 thin film transistors using Y2O3 buffer layers on polycarbonate substrateHsu, H. H.; Chang, C. Y.; Cheng, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010High-kappa TiCeO MIM Capacitors with a Dual-Plasma Interface TreatmentCheng, C. H.; Hsu, H. H.; Hsieh, I. J.; Deng, C. K.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008High-Performance MIM Capacitors Using a High-kappa TiZrO DielectricCheng, C. H.; Pan, H. C.; Lin, S. H.; Hsu, H. H.; Hsiao, C. N.; Chou, C. P.; Yeh, F. S.; Chin, Albert; 機械工程學系; 電子工程學系及電子研究所; Department of Mechanical Engineering; Department of Electronics Engineering and Institute of Electronics
1-Jun-2010Higher-kappa titanium dioxide incorporating LaAlO(3) as dielectrics for MIM capacitorsCheng, C. H.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2010Higher-kappa titanium dioxide incorporating LaAlO3 as dielectrics for MIM capacitorsCheng, C. H.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Impacts of NH(3) plasma treatment on double-gated poly-Si nanowire thin-film transistorsLee, K. H.; Lin, H. C.; Hsu, H. H.; Huang, T. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Improved Lower Electrode Oxidation of High-kappa TiCeO Metal-Insulator-Metal Capacitors by Using a Novel Plasma TreatmentCheng, C. H.; Hsu, H. H.; Deng, C. K.; Chin, Albert; Chou, C. P.; 機械工程學系; Department of Mechanical Engineering
1-Jan-2010Lanthanide-Oxides Mixed TiO(2) Dielectrics for High-kappa MIM CapacitorsCheng, C. H.; Deng, C. K.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2010Lanthanide-Oxides Mixed TiO2 Dielectrics for High-kappa MIM CapacitorsCheng, C. H.; Deng, C. K.; Hsu, H. H.; Chen, P. C.; Liou, B. H.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2015Low-Voltage InGaZnO Thin Film Transistors with Small Sub-Threshold SwingCheng, C. H.; Chou, K. I.; Hsu, H. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
27-Oct-2018On the Electrical Characteristics of Ferroelectric FinFET Using Hafnium Zirconium Oxide with Optimized Gate StackLin, M. H.; Fan, C. C.; Hsu, H. H.; Liu, C.; Chen, K. M.; Cheng, C. H.; Chang, C. Y.; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
30-May-2007Operations of poly-Si nanowire thin-film transistors with a multiple-gated configurationSu, C. J.; Lin, H. C.; Tsai, H. H.; Hsu, H. H.; Wang, T. M.; Huang, T. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2015The Role of Oxygen Vacancies on Switching Characteristics of TiOx Resistive MemoriesZheng, Z. W.; Hsu, H. H.; Chen, P. C.; Cheng, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2010A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO(3) rf CapacitorCheng, C. H.; Huang, C. C.; Hsu, H. H.; Chen, P. C.; Chiang, K. C.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2010A Study on Frequency-Dependent Voltage Nonlinearity of SrTiO3 rf CapacitorCheng, C. H.; Huang, C. C.; Hsu, H. H.; Chen, P. C.; Chiang, K. C.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 20