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公開日期標題作者
2010Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access MemoryChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Tsai, Chih-Tsung; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
24-二月-2010Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitrideLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2008Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reductionLin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma TreatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-三月-2009Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memoryHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012A counter electrode based on hollow spherical particles of polyaniline for a dye-sensitized solar cellHuang, Kuan-Chieh; Hu, Chih-Wei; Tseng, Chen-Ya; Liu, Chen-Yu; Yeh, Min-Hsin; Wei, Hung-Yu; Wang, Chun-Chieh; Vittal, R.; Chu, Chih-Wei; Ho, Kuo-Chuan; 光電工程學系; Department of Photonics
1-一月-2010Effects of mesoscopic poly (3,4-ethylenedioxythiophene) films as counter electrodes for dye-sensitized solar cellsLee, Kun-Mu; Chiu, Wei-Hao; Wei, Hung-Yu; Hu, Chih-Wei; Suryanarayanan, Vembu; Hsieh, Weng-Feng; Ho, Kuo-Chuan; 光電工程學系; Department of Photonics
2009Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory DevicesHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Lee, Sheng-Wei; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-九月-2012Enhancing threshold voltage of AlGaN/GaN high electron mobility transistors by nano rod structure: From depletion mode to enhancement modeXuan, Rong; Kuo, Wei-Hong; Hu, Chih-Wei; Lin, Suh-Fang; Chen, Jenn-Fang; 電子物理學系; Department of Electrophysics
14-四月-2008Formation of cobalt-silicide nanocrystals in Ge-doped dielectric layer for the application on nonvolatile memoryHu, Chih-Wei; Chang, Ting-Chang; Liu, Po-Tsun; Tu, Chun-Hao; Lee, Sheng-Kai; Sze, Simon M.; Chang, Chun-Yen; Chiou, Bi-Shiou; Tseng, Tseung-Yuan; 電子工程學系及電子研究所; 光電工程學系; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
2008Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layerLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Chang, Chun-Yen; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2010Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambientHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2010Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N-2 and O-2 ambientHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device ApplicationHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device ApplicationHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-二月-2009Improved reliability of Mo nanocrystal memory with ammonia plasma treatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2010The Influence of Charge Trapping on the Electrochromic Performance of Poly(3,4-alkylenedioxythiophene) DerivativesHuang, Jen-Hsien; Hsu, Chih-Yu; Hu, Chih-Wei; Chu, Chih-Wei; Ho, Kuo-Chuan; 光電工程學系; Department of Photonics
28-六月-2010Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin filmsChen, Min-Chen; Chang, Ting-Chang; Tsai, Chih-Tsung; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc OxideChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Guan-Chang; Chen, Shih-Cheng; Huang, Hui-Chun; Hu, Chih-Wei; Sze, Simon M.; Tsai, Tsung-Ming; Gan, Der-Shin; Yeh (Huang), Fon-Shan; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-二月-2009NiSiGe nanocrystals for nonvolatile memory devicesHu, Chih-Wei; Chang, Ting-; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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