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公開日期標題作者
1-二月-201030-GHz Low-Noise Performance of 100-nm-Gate-Recessed n-GaN/AlGaN/GaN HEMTsChang, Chia-Ta; Hsu, Heng-Tung; Chang, Edward Yi; Kuo, Chien-I; Huang, Jui-Chien; Lu, Chung-Yu; Miyamoto, Yasuyuki; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十月-2009460-nm InGaN-Based LEDs Grown on Fully Inclined Hemisphere-Shape-Patterned Sapphire Substrate With Submicrometer SpacingChang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Hsiao, Yu-Lin; Huang, Jui-Chien; Lu, Chung-Yu; Chang, Huang-Choung; Cheng, Kai-Wen; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2008AlGaAs/InGaAs high electron mobility transistor grown on Si substrate with Ge/Ge(x)Si(1-x) metamorphic buffer layersChang, Edward Yi; Huang, Jui-Chien; Lin, Yueh-Chin; Hsieh, Yen-Chang; Chang, Chia-Yuan; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2008AlGaAs/InGaAs high electron mobility transistor grown on Si substrate with Ge/GexSi1-x metamorphic buffer layersChang, Edward Yi; Huang, Jui-Chien; Lin, Yueh-Chin; Hsieh, Yen-Chang; Chang, Chia-Yuan; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-2009Changes of Electrical Characteristics for AlGaN/GaN HEMTs Under Uniaxial Tensile StrainChang, Chia-Ta; Hsiao, Shih-Kuang; Chang, Edward Yi; Lu, Chung-Yu; Huang, Jui-Chien; Lee, Ching-Ting; 材料科學與工程學系; Department of Materials Science and Engineering
2010A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power ApplicationsHuang, Jui-Chien; Lin, Yueh-Chin; Tseng, Yu-Ling; Chen, Ke-Shian; Lu, Po-Chin; Lin, Mong-E; Chang, Edward-Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-五月-2008Enhancement of the Schottky barrier height using a nitrogen-rich tungsten nitride thin film for the schottky contacts on AlGaN/GaN heterostructuresLu, Chung-Yu; Chang, Edward Yi; Huang, Jui-Chien; Chang, Chia-Ta; Lin, Mei-Hsuan; Lee, Ching-Tung; 材料科學與工程學系; Department of Materials Science and Engineering
2010Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave ApplicationsHuang, Jui-Chien; Hsu, Heng-Tung; Chang, Edward-Yi; Lu, Chung-Yu; Chang, Chia-Ta; Kuo, Fang-Yao; Chen, Yi-Chung; Hsu, Ting-Hung; 材料科學與工程學系; Department of Materials Science and Engineering
2008MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN bufferLin, Kung-Liang; Chang, Edward-Yi; Huang, Jui-Chien; Huang, Wei-Ching; Hsiao, Yu-Lin; Chiang, Chen-Hao; Li, Tingkai; Tweet, Doug; Maa, Jer-Shen; Hsu, Sheng-Teng; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2007Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTsShiu, Jin-Yu; Huang, Jui-Chien; Desmaris, Vincent; Chang, Chia-Ta; Lu, Chung-Yu; Kumakura, Kazuhide; Makimoto, Toshiki; Zirath, Herbert; Rorsman, Niklas; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2012RF Characteristics of AlGaN/GaN HEMTs under Different TemperaturesChiu, Yu-Sheng; Huang, Jui-Chien; Lin, Tai-Ming; Chou, Yu-Ting; Lu, Chung-Yu; Chang, Chia-Ta; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2010Study of the inversion behaviors of Al(2)O(3)/In(x)Ga(1-x)As metal-oxide-semiconductor capacitors with different In contentsWu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2010Study of the inversion behaviors of Al2O3/InxGa1-xAs metal-oxide-semiconductor capacitors with different In contentsWu, Yun-Chi; Chang, Edward Yi; Lin, Yueh-Chin; Kei, Chi-Chung; Hudait, Mantu K.; Radosavljevic, Marko; Wong, Yuen-Yee; Chang, Chia-Ta; Huang, Jui-Chien; Tang, Shih-Hsuan; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2009微波功率元件應用含場效電極板之氮化鋁鎵/氮化鎵高電子遷移率電晶體之製作與線性度分析黃瑞乾; Huang, Jui-Chien; 張翼; Chang, Edward-Yi; 材料科學與工程學系
顯示 1 到 14 筆資料，總共 14 筆