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公開日期標題作者
1-八月-200410 Gb/s single-mode vertical-cavity surface-emitting laser with large aperture and oxygen implantationLai, FI; Hsueh, TH; Chang, YH; Kuo, HC; Wang, SC; Laih, LH; Song, CP; Yang, HP; 光電工程學系; Department of Photonics
1-六月-2004As+-implanted AlGaAs oxide-confined VCSEL with enhanced oxidation rate and high performance uniformityLaih, LH; Kuo, HC; Lin, GR; Laih, LW; Wang, SC; 光電工程學系; Department of Photonics
22-七月-1999Characteristics of SiC-based thin-film LED fabricated using plasma-enhanced CVD system with stainless steel meshChen, YA; Hsu, ML; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-1996Double graded-gap hydrogenated amorphous silicon carbide thin-film light-emitting diode with composition-graded N layer and carbon-increasing P layerChen, YA; Chen, JK; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-四月-1997Electrical and luminescent characteristics of alpha-SiC:H p-i-n thin-film LED's with graded-gap junctionsJen, TS; Shin, NF; Laih, LH; Chen, YA; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2004Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWsChang, YH; Kuo, HC; Lai, FI; Chang, YA; Lu, CY; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
2005Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communicationKuo, HC; Chang, YH; Chang, YA; Tseng, KF; Laih, LH; Wang, SC; Yu, HC; Sung, CP; Yang, HP; 光電工程學系; Department of Photonics
1-三月-2004High speed performance of 850 nm silicon-implanted AlGaAs/GaAs vertical cavity emitting lasersKuo, HC; Chang, YS; Lai, FY; Hseuh, TH; Chu, LT; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
16-十月-2003High-speed characteristics of large-area single-transverse-mode vertical-cavity surface-emitting lasersHsueh, TH; Kuo, HC; Lai, FI; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
10-七月-2003High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELsKuo, HC; Chang, YS; Lai, FY; Hsueh, TH; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
2004Improvement of high speed performance for 10-Gb/s 850-nm VCSELs using InGaAsP/InGaP strain-compensated MQWsChang, YS; Kuo, HC; Lai, FI; Chang, YA; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
2004Improvement of kink characteristic of proton implanted VCSEL with ITO overcoatingLai, FI; Chang, YH; Laih, LH; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
15-十一月-2004Improvement of kink characteristics performance of GaAsVCSEL with a indium-tin-oxide top transparent overcoatingLai, F; Chang, YH; Hsueh, TH; Huang, HW; Laih, LH; Kuo, HC; Wang, SC; Guung, TC; 光電工程學系; Department of Photonics
10-五月-2006A novel method to improve VCSELs oxide-confined aperture uniformity using selective As+-implanted underlying layerHuang, HW; Kao, CC; Chang, YA; Kuo, HC; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
9-七月-1998Optoelectronic characteristics of a-SiC : H-based pin thin film LEDs having a thin Mo buffer layer in contact with p-type a-Si : HChen, YA; Wu, YH; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layerChen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1997Optoelectronic characteristics of alpha-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-alpha-SiCGe:H layerChen, YA; Chiou, CF; Tsay, WC; Laih, LH; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1997Porous silicon light-emitting diode with tunable colorChen, YA; Chen, BF; Tsay, WC; Laih, LH; Chang, MN; Chyi, JI; Hong, JW; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Simulation and analysis of 1300-nm In0.4Ga0.6As0.986N0.014/GaAs1-xNx quantum-well lasers with various GaAs1-xNx strain compensated barriersChang, YA; Kuo, HC; Chang, YH; Wang, SC; Laih, LH; 光電工程學系; Department of Photonics
2003Temperature dependent near-field emission profiles of oxide-confined vertical cavity surface emitting lasersLu, TC; Shieu, WJ; Chang, YH; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
顯示 1 到 20 筆資料，總共 20 筆