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20012.4 V-operated enhancement-mode power PHEMTs for personal handy-phone system applicationChen, SH; Chang, EY; Lin, YC; Lee, CS; 友訊交大聯合研發中心; D Link NCTU Joint Res Ctr
2001AIGaN Schottky characteristics after hybrid photo-enhanced wet and inductively coupled plasma etchHuang, WJ; Fang, CY; Wong, JS; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
2001AIGaN/GaN HEMT sub-bands study using low-temperature photoluminescenceFang, CY; Lin, CF; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
27-三月-1996Chemistry of Ti(OiPr)Cl-3 with chloride and oxygen-containing ligands: The roles of alkoxide and solvents in the six-coordinate titanium complexesGau, HM; Lee, CS; Lin, CC; Jiang, MK; Ho, YC; Kuo, CN; 交大名義發表; 應用化學系; National Chiao Tung University; Department of Applied Chemistry
20-二月-2006Effect of the transition metal on the synthesis of quaternary sulfides MPb8In17S34 (M = Cu, Ag, Au)Wang, KC; Lee, CS; 應用化學系; Department of Applied Chemistry
2005A gold-free fully copper-metallized InP heterojunction bipolar transistor using non-alloyed ohmic contact and platinum diffusion barrierChang, SW; Chang, EY; Lee, CS; Chen, KS; Tseng, CW; Tu, YY; Lee, CT; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2005Gold-free fully cu-metallized InGaP/GaAs heterojunction bipolar transistorChang, SW; Chang, EY; Biswas, D; Lee, CS; Chen, KS; Tseng, CW; Hsieh, TL; Wu, WC; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2004Low-noise metamorphic HEMTs with reflowed 0.1 mu m T-gateLien, YC; Chang, EY; Chang, HC; Chu, LH; Huang, GW; Lee, HM; Lee, CS; Chen, SH; Shen, PT; Chang, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2003A metamorphic high electron-mobitity transistor with reflowed submicron T-Gate for high-speed optoelectronics applicationsLien, YC; Chang, EY; Chu, LX; Chang, HC; Lee, CS; Chen, SH; Lin, YC; Lee, HM; 材料科學與工程學系; Department of Materials Science and Engineering
2004Microstructural evolution of Cu/Ta/GaAs multilayers with thermal annealingWu, WC; Chen, CY; Lee, CS; Chang, EY; Chang, L; 材料科學與工程學系; Department of Materials Science and Engineering
2001A novel I-line phase shift mask (PSM) technique for submicron T-Gate formationFu, DK; Chang, HC; Fang, CY; Lee, CS; Chang, EY; 材料科學與工程學系; Department of Materials Science and Engineering
21-七月-2005Relaxation dynamics and structural characterization of organic nanoparticles with enhanced emissionBhongale, CJ; Chang, CW; Lee, CS; Diau, EWG; Hsu, CS; 應用化學系分子科學碩博班; Institute of Molecular science
2004A study of the fabrication of flip-chip bumps using dry-filmKe, ZT; Lee, CS; Shen, KH; Chang, EY; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2004Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as Schottky metals for GaAs diodesChang, HC; Lee, CS; Chen, SH; Chang, EY; He, J; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-七月-2003Study of titanium tungsten nitride and tungsten nitride Schottky contacts on n-GaNLee, CS; Chang, EY; Chang, L; Fang, CY; Huang, YL; Huang, JS; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
2002Use of Ti/W/Cu, Ti/Co/Cu and Ti/Mo/Cu multi-layer metals as Schottky metals for GaAs Schottky diodesLee, CS; Chang, EY; He, JJ; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-2004Use of WNX as the diffusion barrier for interconnect copper metallization of InGaP-GaAs HBTsChang, SW; Chang, EY; Lee, CS; Chen, KS; Tseng, CW; Hsieh, TL; 材料科學與工程學系; Department of Materials Science and Engineering
顯示 1 到 17 筆資料，總共 17 筆