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公開日期標題作者
1-一月-2020Analytical Modeling of Read-Induced SET-State Conductance Change in a Hafnium-Oxide Resistive Switching DeviceSu, Po-Cheng; Jiang, Cheng-Min; Chen, Yu-Jia; Wang, Chih-Chieh; Li, Kai-Shin; Lin, Chao-Cheng; Wang, Tahui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
24-二月-2010Charge storage characteristics of high density Mo nanocrystal embedded in silicon oxide and silicon nitrideLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2008Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reductionLin, Chao-Cheng; Chang, Ting-; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Charge Storage Characteristics of Mo Nanocrystal Memory Influenced by Ammonia Plasma TreatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-三月-2009Cobalt nanodots formed by annealing the CoSiO layer for the application of the nonvolatile memoryHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Shueh, Pei-Kun; Lin, Chao-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Min-Chen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Effect of Hydrogen Dilution on the Intrinsic a-Si:H Film of the Heterojunction Silicon-Based Solar CellHsiao, Jui-Chung; Chen, Chien-Hsun; Lin, Chao-Cheng; Wu, Der-Ching; Yu, Peichen; 光電工程學系; Department of Photonics
2011Effect of Top Electrode Material on Resistive Switching Characteristics in MnO2 Nonvolatile Memory DevicesTsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chiang, Lan-Shin; Chen, Shih-Cheng; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Enhancement of NiSi-Based Nanocrystal Formation by Incorporating Ge Elements for Nonvolatile Memory DevicesHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Lee, Sheng-Wei; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2011Formation and composition of titanium oxinitride nanocrystals synthesized via nitridizing titanium oxide for nonvolatile memory applicationsFeng, Li-Wei; Chang, Chun-Yen; Chang, Ting-Chang; Tu, Chun-Hao; Wang, Pai-Syuan; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Hui-Chun; Gan, Der-Shin; Ho, New-Jin; Chen, Shih-Ching; Chen, Shih-Cheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008Formation of Mo silicide nanodot memory by rapid thermal annealing dual electron-gun evaporated Mo-Si layerLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Chang, Chun-Yen; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2010Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N(2) and O(2) ambientHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2010Formation of the distributed NiSiGe nanocrystals nonvolatile memory formed by rapidly annealing in N-2 and O-2 ambientHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chiang, Cheng-Neng; Lin, Chao-Cheng; Chen, Min-Chen; Chang, Chun-Yen; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO(2) Pellets for the Nonvolatile Memory Device ApplicationHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2010High Density Ni Nanocrystals Formed by Coevaporating Ni and SiO2 Pellets for the Nonvolatile Memory Device ApplicationHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Huang, Yu-Hao; Lin, Chao-Cheng; Chen, Min-Chen; Huang, Fon-Shan; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2013Highly textured ZnO:B films grown by low pressure chemical vapor deposition for efficiency enhancement of heterojunction silicon-based solar cellsHsiao, Jui-Chung; Chen, Chien-Hsun; Yang, Hung-Jen; Wu, Chien-Liang; Fan, Chia-Ming; Huang, Chien-Fu; Lin, Chao-Cheng; Yu, Peichen; Hwang, Jenn-Chang; 光電工程學系; Department of Photonics
9-二月-2009Improved reliability of Mo nanocrystal memory with ammonia plasma treatmentLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Hu, Chih-Wei; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Improvement of Charge-Storage Characteristics of Mo Nanocrystal Memory by Double-Layer StructureLin, Chao-Cheng; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Wei-Ren; Feng, Li-Wen; Sze, Simon M.; Tseng, Tseung-Yuen; Chen, Sheng-Chi; Lin, Jian-Yang; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-五月-2010Improvement of resistance switching characteristics in a thin FeO(x) transition layer of TiN/SiO(2)/FeO(x)/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
31-五月-2010Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealingFeng, Li-Wei; Chang, Chun-Yen; Chang, Yao-Feng; Chang, Ting-Chang; Wang, Shin-Yuan; Chen, Shih-Ching; Lin, Chao-Cheng; Chen, Shih-Cheng; Chiang, Pei-Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Influence of Nanocrystals on Resistive Switching Characteristic in Binary Metal Oxides Memory DevicesTsai, Yu-Ting; Chang, Ting-Chang; Lin, Chao-Cheng; Chen, Shih-Cheng; Chen, Chi-Wen; Sze, Simon M.; Yeh (Hung), Fon-Shan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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