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顯示 1 到 19 筆資料，總共 19 筆
公開日期標題作者
1-六月-2013Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition TemperaturesHai Dang Trinh; Minh Thuy Nguyen; Lin, Yueh Chin; Quoc Van Duong; Hong Quan Nguyen; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
30-八月-2018Effect of surface passivation by a low pressure and temperature environment-grown thermal oxide layer for multi-crystalline silicon solar cellsLiao, Shun Sing; Chuang, Chuan Lung; Lin, Yueh Chin; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 交大名義發表; National Chiao Tung University
八月-2016Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect TransistorsQuang Ho Luc; Cheng, Shou Po; Chang, Po Chun; Huy Binh Do; Chen, Jin Han; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2017Efficiency Enhancement of Multicrystalline Silicon Solar Cells by Inserting Two-Step Growth Thermal Oxide to the Surface Passivation LayerLiao, Shun Sing; Lin, Yueh Chin; Chuang, Chuan Lung; Chang, Edward Yi; 材料科學與工程學系; Department of Materials Science and Engineering
1-五月-2013Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing TemperaturesHai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-八月-2014Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation LayerQuang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-十月-2013Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing TemperaturesLin, Yueh Chin; Trinh, Hai Dang; Chuang, Ting Wei; Iwai, Hiroshi; Kakushima, Kuniyuki; Ahmet, Parhat; Lin, Chun Hsiung; Diaz, Carlos H.; Chang, Hui Chen; Jang, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-八月-2017Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power ApplicationLin, Yueh Chin; Huang, Yu Xiang; Huang, Gung Ning; Wu, Chia Hsun; Yao, Jing Neng; Chu, Chung Ming; Chang, Shane; Hsu, Chia Chieh; Lee, Jin Hwa; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 電子物理學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-九月-2017Evaluation of AlGaN/GaN metal-oxide-semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applicationsChiu, Yu Sheng; Luc, Quang Ho; Lin, Yueh Chin; Huang, Jui Chien; Dee, Chang Fu; Majlis, Burhanuddin Yeop; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-七月-2019Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applicationsYao, Jing Neng; Lin, Yueh Chin; Lin, Min Song; Huang, Ting Jui; Hsu, Heng Tung; Sze, Simon M.; Chang, Edward Y.; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
16-十月-2017Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power applicationHsiao, Chih Jen; Kakkerla, Ramesh Kumar; Chang, Po Chun; Lumbantoruan, Franky Juanda; Lee, Tsu Ting; Lin, Yueh Chin; Chang, Shoou Jinn; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
五月-2016High-permitivity cerium oxide prepared by molecular beam deposition as gate dielectric and passivation layer and applied to AlGaN/GaN power high electron mobility transistor devicesChiu, Yu Sheng; Liao, Jen Ting; Lin, Yueh Chin; Liu, Shin Chien; Lin, Tai Ming; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi; 材料科學與工程學系; 影像與生醫光電研究所; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics
1-十二月-2015Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-StackHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2018In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma TreatmentLuc, Quang Ho; Yang, Kun Sheng; Lin, Jia Wei; Chang, Chia Chi; Huy Binh Do; Huynh, Sa Hoang; Minh Thien Huu Ha; Tuan Anh Nguyen; Lin, Yueh Chin; Hu, Chenming; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電機學院; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-五月-2017Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device ApplicationHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Tuan Anh Nguyen; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
十二月-2016Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47AsDo, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
九月-2016Methods for Extracting Flat Band Voltage in the InGaAs High Mobility MaterialsHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-十二月-2015Plasma Enhanced Atomic Layer Deposition Passivated HfO2/AlN/In0.53Ga0.47As MOSCAPs With Sub-Nanometer Equivalent Oxide Thickness and Low Interface Trap DensityLuc, Quang Ho; Do, Huy Binh; Ha, Minh Thien Huu; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-八月-2017Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devicesDo, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Nguyen, Tuan Anh; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
顯示 1 到 19 筆資料，總共 19 筆