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公開日期標題作者
1-二月-2003Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistorsLin, HC; Wang, MF; Lu, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2006Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping techniqueGu, SH; Wang, TH; Lu, WP; Ting, WC; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2006Device characteristics and aggravated negative bias temperature instability in p-channel metal-oxide-semiconductor field-effect transistors with uniaxial compressive strainLu, CY; Lin, HC; Chang, YF; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2004An endurance evaluation method for flash EEPROMZous, NK; Chen, YJ; Chin, CY; Tsai, WJ; Lu, TC; Chen, MS; Lu, WP; Wang, TH; Pan, SC; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2004Fabrication and characteristics of high-speed oxide-confined VCSELs using InGaAsP-InGaP strain-compensated MQWsChang, YH; Kuo, HC; Lai, FI; Chang, YA; Lu, CY; Laih, LH; Wang, SC; 光電工程學系; Department of Photonics
1-二月-2003High-performance P-channel Schottky-barrier SOI FinFET featuring self-aligned PtSi source/drain and electrical junctionsLin, HC; Wang, MF; Hou, FJ; Lin, HN; Lu, CY; Liu, JT; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2004High-speed (> 10 Gbps) 850 nm oxide-confined vertical cavity surface emitting lasers (VCSELs) with a planar process and reduced parasitic capacitanceChang, YH; Lai, FI; Lu, CY; Kuo, HC; Yu, HC; Sung, CP; Yang, HP; Wang, SC; 光電工程學系; Department of Photonics
1998Highly reliable liquid-phase deposited SiO2 with nitrous oxide plasma post-treatment for low temperature processed poly-Si TFT'sYeh, CF; Chen, DC; Lu, CY; Liu, C; Lee, ST; Liu, CH; Chen, TJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2002Highly reliable liquid-phase-deposited SiO2 with nitrous oxide plasma post-treatment for low-temperature-processed polysilicon thin film transistorsYeh, CF; Chen, DCH; Lu, CY; Liu, C; Lee, ST; Liu, CH; Chen, TJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Impacts of uniaxial compressive strain on dynamic negative bias temperature instability of p-channel MOSFETsLu, CY; Lin, HC; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2005Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasersChang, YA; Kuo, HC; Lu, CY; Kuo, YK; Wang, SC; 光電工程學系; Department of Photonics
2004Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping techniqueGu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2004Lateral migration of trapped holes in a nitride storage flash memory cell and its qualification methodologyZous, NK; Lee, MY; Tsai, WJ; Kuo, A; Huang, LT; Lu, TC; Liu, CJ; Wang, TH; Lu, WP; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003A low noise composite-channel metamorphic HEMT for wireless communication applicationsLu, CY; Chen, KS; Lee, HM; Chang, EY; Chen, SH; Lin, YC; Chen, GJ; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-2005Mechanism for slow switching effect in advanced low-voltage, high-speed Pb(Zr1-XTiX)O-3 ferroelectric memoryTsai, CW; Lai, SC; Yen, CT; Lien, HM; Lung, HL; Wu, TB; Wang, TH; Liu, R; Lu, CY; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-2004A novel erase scheme to suppress overerasure in a scaled 2-bit nitride storage flash memory cellYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Chen, HY; Zous, NK; Ting, WC; Ku, J; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2005A novel fully CMOS process compatible PREM for SOC applicationsYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Liao, YY; Zous, NK; Chin, CY; Chen, YR; Chen, MS; Ting, WC; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2006A novel operation method to avoid overerasure in a scaled trapping-nitride localized charge storage flash memory cell and its application for multilevel programmingTsai, WJ; Zous, NK; Wang, TH; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2005A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applicationsYeh, CC; Wang, TH; Tsai, WJ; Lu, TC; Chen, MS; Liao, YY; Ting, WC; Ku, YHJ; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2003A novel soft-program for a narrow erased state Vt distribution, read disturbance suppression and over-program annihilation in multilevel cell flash memoriesYeh, CC; Fan, TH; Lu, TC; Wang, TH; Pan, S; Lu, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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